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TwinMOS 8DPT5MK8-TATP 2GB
Samsung M471A1K43DB1-CWE 8GB

TwinMOS 8DPT5MK8-TATP 2GB vs Samsung M471A1K43DB1-CWE 8GB

Overall score
star star star star star
TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Overall score
star star star star star
Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

Differences Specifications Comments

Differences

TwinMOS 8DPT5MK8-TATP 2GB Reasons to consider
TwinMOS 8DPT5MK8-TATP 2GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 16.1
    Average value in the tests
Samsung M471A1K43DB1-CWE 8GB Reasons to consider
Samsung M471A1K43DB1-CWE 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    33 left arrow 53
    Around -61% lower latency
  • Faster write speed, GB/s
    13.0 left arrow 1,590.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 6400
    Around 4 higher bandwidth

Specifications

Complete list of technical specifications
TwinMOS 8DPT5MK8-TATP 2GB
Samsung M471A1K43DB1-CWE 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    53 left arrow 33
  • Read speed, GB/s
    3,726.4 left arrow 16.1
  • Write speed, GB/s
    1,590.1 left arrow 13.0
  • Memory bandwidth, mbps
    6400 left arrow 25600
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    522 left arrow 2987

TwinMOS 8DPT5MK8-TATP 2GB RAM comparisons

Swissbit SEU25664D6BC2EP-30 2GB
Micron Technology 9HTF12872JY80EE1D4 1GB

Samsung M471A1K43DB1-CWE 8GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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