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TwinMOS 9DNPBNZB-TATP 4GB
Samsung M471A1G43DB0-0-B 8GB
Compare
TwinMOS 9DNPBNZB-TATP 4GB vs Samsung M471A1G43DB0-0-B 8GB
Overall score
TwinMOS 9DNPBNZB-TATP 4GB
Overall score
Samsung M471A1G43DB0-0-B 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
TwinMOS 9DNPBNZB-TATP 4GB
Report a bug
Below the latency in the PassMark tests, ns
25
32
Around 22% lower latency
Faster write speed, GB/s
8.4
6.9
Average value in the tests
Reasons to consider
Samsung M471A1G43DB0-0-B 8GB
Report a bug
Faster reading speed, GB/s
13.8
12.5
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
TwinMOS 9DNPBNZB-TATP 4GB
Samsung M471A1G43DB0-0-B 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
32
Read speed, GB/s
12.5
13.8
Write speed, GB/s
8.4
6.9
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2180
1844
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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