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TwinMOS 9DNPBNZB-TATP 4GB
Samsung M378B2873FHS-CH9 1GB

TwinMOS 9DNPBNZB-TATP 4GB vs Samsung M378B2873FHS-CH9 1GB

Overall score
star star star star star
TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

Overall score
star star star star star
Samsung M378B2873FHS-CH9 1GB

Samsung M378B2873FHS-CH9 1GB

Differences Specifications Comments

Differences

TwinMOS 9DNPBNZB-TATP 4GB Reasons to consider
TwinMOS 9DNPBNZB-TATP 4GB
Report a bug
  • Faster write speed, GB/s
    8.4 left arrow 7.5
    Average value in the tests
Samsung M378B2873FHS-CH9 1GB Reasons to consider
Samsung M378B2873FHS-CH9 1GB
Report a bug
  • Below the latency in the PassMark tests, ns
    22 left arrow 25
    Around -14% lower latency
  • Faster reading speed, GB/s
    12.7 left arrow 12.5
    Average value in the tests

Specifications

Complete list of technical specifications
TwinMOS 9DNPBNZB-TATP 4GB
Samsung M378B2873FHS-CH9 1GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    25 left arrow 22
  • Read speed, GB/s
    12.5 left arrow 12.7
  • Write speed, GB/s
    8.4 left arrow 7.5
  • Memory bandwidth, mbps
    10600 left arrow 10600
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • Ranking PassMark (The more the better)
    2180 left arrow 1175

TwinMOS 9DNPBNZB-TATP 4GB RAM comparisons

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Samsung M378B2873FHS-CH9 1GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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