TwinMOS 9DNPBNZB-TATP 4GB vs Samsung M378B2873FHS-CH9 1GB

Punteggio complessivo

TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

Punteggio complessivo

Samsung M378B2873FHS-CH9 1GB

Samsung M378B2873FHS-CH9 1GB

Differenze Specifiche tecniche Commenti

Differenze

TwinMOS 9DNPBNZB-TATP 4GB

Motivi da considerare
TwinMOS 9DNPBNZB-TATP 4GB

Velocità di scrittura più elevata, GB/s

8.4 7.5

Valore medio nei test

Samsung M378B2873FHS-CH9 1GB

Motivi da considerare
Samsung M378B2873FHS-CH9 1GB

Al di sotto della latenza nei test PassMark, ns

22 25

Intorno -14% latenza inferiore
Velocità di lettura più elevata, GB/s

12.7 12.5

Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche

TwinMOS 9DNPBNZB-TATP 4GB

Samsung M378B2873FHS-CH9 1GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR3
Latenza in PassMark, ns

25 22
Velocità di lettura, GB/s

12.5 12.7
Velocità di scrittura, GB/s

8.4 7.5
Larghezza di banda della memoria, mbps

10600 10600

Other

Descrizione

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
Temporizzazioni / Velocità di clock

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
Classifica PassMark (più sono, meglio è)

2180 1175

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

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