RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Micron Technology 9ASF51272PZ-2G1B1 4GB
Compare
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB vs Micron Technology 9ASF51272PZ-2G1B1 4GB
Overall score
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Overall score
Micron Technology 9ASF51272PZ-2G1B1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Report a bug
Below the latency in the PassMark tests, ns
25
51
Around 51% lower latency
Faster reading speed, GB/s
12.6
9.6
Average value in the tests
Reasons to consider
Micron Technology 9ASF51272PZ-2G1B1 4GB
Report a bug
Faster write speed, GB/s
7.8
7.2
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Micron Technology 9ASF51272PZ-2G1B1 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
51
Read speed, GB/s
12.6
9.6
Write speed, GB/s
7.2
7.8
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2051
2248
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB RAM comparisons
Team Group Inc. Xtreem-LV-2133 4GB
Kingston KHX1866C10S3L/8G 8GB
Micron Technology 9ASF51272PZ-2G1B1 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Micron Technology 9ASF51272PZ-2G1B1 4GB
Nanya Technology M2F4G64CB8HG5N-CG 4GB
Micron Technology 18ASF1G72PZ-2G1B1 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston KHX2400C14D4/16G 16GB
Samsung M393B1K70CH0-YH9 8GB
G Skill Intl F4-3733C17-8GTZKW 8GB
Nanya Technology M2F4G64CB8HB9N-CG 4GB
Crucial Technology CT4G4DFS8266.C8FB 4GB
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology CT4G4DFS8266.C8FG 4GB
Samsung M391B5673EH1-CH9 2GB
Avant Technology J642GU44J2320ND 16GB
Patriot Memory (PDP Systems) PSD22G6672 2GB
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB
AMD R5S38G1601U2S 8GB
Panram International Corporation PUD42400C154G4NJK 4GB
Kingston 99U5474-013.A00LF 2GB
Kingston 9905678-005.A00G 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Essencore Limited KD4AGU880-36A180X 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
Ramaxel Technology RMSA3270MB86H9F2400 4GB
Kingston 9965525-140.A00LF 8GB
Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB
‹
›
Report a bug
×
Bug description
Source link