RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Samsung M378A1K43CB2-CTD 8GB
Compare
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB vs Samsung M378A1K43CB2-CTD 8GB
Overall score
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Overall score
Samsung M378A1K43CB2-CTD 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Report a bug
Below the latency in the PassMark tests, ns
25
32
Around 22% lower latency
Reasons to consider
Samsung M378A1K43CB2-CTD 8GB
Report a bug
Faster reading speed, GB/s
15.9
12.6
Average value in the tests
Faster write speed, GB/s
12.0
7.2
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Samsung M378A1K43CB2-CTD 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
32
Read speed, GB/s
12.6
15.9
Write speed, GB/s
7.2
12.0
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2051
2952
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB RAM comparisons
Team Group Inc. Xtreem-LV-2133 4GB
Kingston KHX1866C10S3L/8G 8GB
Samsung M378A1K43CB2-CTD 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378A5143EB1-CPB 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Apacer Technology 78.01G86.9H50C 1GB
Corsair CMK16GX4M2E4000C19 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Samsung M378A1K43CB2-CTD 8GB
AMD R5316G1609U2K 8GB
Micron Technology 18ASF2G72PDZ-2G3B1 16GB
Samsung M471B5173BH0-CK0 4GB
A-DATA Technology AO2P21FC8R2-BRGS 8GB
Kingston 99U5474-010.A00LF 2GB
Wilk Elektronik S.A. GR3200D464L22S/16G 16GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-3600C18-32GTZR 32GB
Samsung M471B5273CH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A
A-DATA Technology AM2L16BC4R1-B0CS 4GB
G Skill Intl F4-2400C16-8GFXR 8GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Corsair CMW32GX4M2C3000C15 16GB
Transcend Information TS512MSK64W6H 4GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
Kingston KHX2133C11D3/4GX 4GB
SK Hynix HMA84GR7MFR4N-TF 32GB
Apacer Technology 78.01G86.9H50C 1GB
G Skill Intl F4-4133C19-8GTZC 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C16-8GVKBN 8GB
G Skill Intl F3-1600C11-4GIS 4GB
Crucial Technology CT8G4SFD824A.M16FB 8GB
Report a bug
×
Bug description
Source link