RAM comparison Samsung M471B5273CH0-CH9 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB

Samsung M471B5273CH0-CH9 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB

Overall score

Samsung M471B5273CH0-CH9 4GB

Overall score

Differences Specifications Comments

Reasons to consider
Samsung M471B5273CH0-CH9 4GB

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB

Below the latency in the PassMark tests, ns

29 48

Around -66% lower latency
Faster reading speed, GB/s

12.2 8.9

Average value in the tests
Faster write speed, GB/s

8.8 5.9

Average value in the tests
Higher memory bandwidth, mbps

12800 10600

Around 1.21 higher bandwidth

Complete list of technical specifications

Samsung M471B5273CH0-CH9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB

Main characteristics

Other

Description

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
Timings / Clock speed

7-7-7-20 / 1333 MHz 9-9-9-24 / 1600 MHz
Ranking PassMark (The more the better)

1420 2036

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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