Samsung M378B1G73EB0-CK0 8GB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB

Samsung M378B1G73EB0-CK0 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB

Puntuación global

Samsung M378B1G73EB0-CK0 8GB

Samsung M378B1G73EB0-CK0 8GB

Puntuación global

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB

Diferencias Especificaciones Comentarios

Diferencias

Samsung M378B1G73EB0-CK0 8GB

Razones a tener en cuenta
Samsung M378B1G73EB0-CK0 8GB

Informar de un error

Mayor velocidad de lectura, GB/s

13.3 9.3

Valor medio en las pruebas
Mayor velocidad de escritura, GB/s

8.5 6.9

Valor medio en las pruebas

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB

Razones a tener en cuenta
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB

Informar de un error

Mayor ancho de banda de la memoria, mbps

19200 12800

En 1.5 mayor ancho de banda

Especificaciones

Lista completa de especificaciones técnicas

Samsung M378B1G73EB0-CK0 8GB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB

Principales características

Tipo de memoria

DDR3 DDR4
Latencia en PassMark, ns

41 41
Velocidad de lectura, GB/s

13.3 9.3
Velocidad de escritura, GB/s

8.5 6.9
Ancho de banda de la memoria, mbps

12800 19200

Other

Descripción

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Tiempos / Velocidad del reloj

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Clasificación PassMark (Cuanto más, mejor)

2322 2044

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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