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Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB vs Samsung M471A5244CB0-CWE 4GB

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Samsung M471A5244CB0-CWE 4GB

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Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Diferencias Especificaciones Comentarios

Especificaciones

Lista completa de especificaciones técnicas
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Principales características
  • Tipo de memoria
    DDR4 left arrow DDR4
  • Latencia en PassMark, ns
    38 left arrow 38
  • Velocidad de lectura, GB/s
    15.5 left arrow 15.5
  • Velocidad de escritura, GB/s
    12.0 left arrow 12.0
  • Ancho de banda de la memoria, mbps
    25600 left arrow 25600
Other
  • Descripción
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Tiempos / Velocidad del reloj
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Clasificación PassMark (Cuanto más, mejor)
    2283 left arrow 2283

Samsung M471A5244CB0-CWE 4GB Comparaciones de la memoria RAM

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Samsung M471A5244CB0-CWE 4GB Comparaciones de la memoria RAM

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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