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Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Comparez
Samsung M471A5244CB0-CWE 4GB vs Samsung M471A5244CB0-CWE 4GB
Note globale
Samsung M471A5244CB0-CWE 4GB
Note globale
Samsung M471A5244CB0-CWE 4GB
Différences
Spécifications
Commentaires
Différences
Raisons de considérer
Samsung M471A5244CB0-CWE 4GB
Signaler un bogue
Raisons de considérer
Samsung M471A5244CB0-CWE 4GB
Signaler un bogue
Spécifications
Liste complète des spécifications techniques
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Principales caractéristiques
Type de mémoire
DDR4
DDR4
Latence dans PassMark, ns
38
38
Vitesse de lecture, GB/s
15.5
15.5
Vitesse d'écriture, GB/s
12.0
12.0
Largeur de bande de la mémoire, mbps
25600
25600
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Vitesse d'horloge
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Classement PassMark (Plus il y en a, mieux c'est)
2283
2283
Samsung M471A5244CB0-CWE 4GB Comparaison des RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M471A5244CB0-CWE 4GB Comparaison des RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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