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Crucial Technology ST51264BA1339.16FK 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB
Comparez
Crucial Technology ST51264BA1339.16FK 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB
Note globale
Crucial Technology ST51264BA1339.16FK 4GB
Note globale
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB
Différences
Spécifications
Commentaires
Différences
Raisons de considérer
Crucial Technology ST51264BA1339.16FK 4GB
Signaler un bogue
Vitesse de lecture plus rapide, GB/s
13.6
12.8
Valeur moyenne dans les tests
Raisons de considérer
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB
Signaler un bogue
En dessous de la latence dans les tests PassMark, ns
26
27
Autour de -4% latence réduite
Spécifications
Liste complète des spécifications techniques
Crucial Technology ST51264BA1339.16FK 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB
Principales caractéristiques
Type de mémoire
DDR3
DDR3
Latence dans PassMark, ns
27
26
Vitesse de lecture, GB/s
13.6
12.8
Vitesse d'écriture, GB/s
8.3
8.3
Largeur de bande de la mémoire, mbps
10600
10600
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10
Timings / Vitesse d'horloge
7-7-7-20 / 1333 MHz
7-7-7-20 / 1333 MHz
Classement PassMark (Plus il y en a, mieux c'est)
2237
2186
Crucial Technology ST51264BA1339.16FK 4GB Comparaison des RAM
SK Hynix HMT351U6CFR8C-H9 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB Comparaison des RAM
Samsung M378B5273DH0-CH9 4GB
SK Hynix HMT41GS6BFR8A-PB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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Signaler un bogue
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Bug description
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