Crucial Technology ST51264BA1339.16FK 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

Crucial Technology ST51264BA1339.16FK 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

总分

Crucial Technology ST51264BA1339.16FK 4GB

Crucial Technology ST51264BA1339.16FK 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

差异规格评论

差异

Crucial Technology ST51264BA1339.16FK 4GB

需要考虑的原因
Crucial Technology ST51264BA1339.16FK 4GB

报告一个错误

更快的读取速度，GB/s

13.6 12.8

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 27

左右 -4% 更低的延时

规格

完整的技术规格清单

Crucial Technology ST51264BA1339.16FK 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

27 26
读取速度，GB/s

13.6 12.8
写入速度，GB/s

8.3 8.3
内存带宽，mbps

10600 10600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2237 2186

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology NT8GA64D88AX3S-HR 8GB

Nanya Technology NT8GA64D88AX3S-HR 8GB

Samsung M378A1G43EB1-CPB 8GB

Samsung M378A1G43EB1-CPB 8GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Patriot Memory (PDP Systems) PSD44G213341 4GB

Patriot Memory (PDP Systems) PSD44G213341 4GB

Crucial Technology CT16G4SFS832A.C8FB 16GB

Crucial Technology CT16G4SFS832A.C8FB 16GB

Crucial Technology CT16G4SFD832A.C16FJ 16GB

Crucial Technology CT16G4SFD832A.C16FJ 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Micron Technology 8ATF1G64HZ-2G3E2 8GB

Micron Technology 8ATF1G64HZ-2G3E2 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Kingston MSI24D4S7S8MB-8 8GB

Kingston MSI24D4S7S8MB-8 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Apacer Technology 78.BAGSR.4030B 4GB

Apacer Technology 78.BAGSR.4030B 4GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Crucial Technology ST51264BA1339.16FK 4GB

Crucial Technology ST51264BA1339.16FK 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C

Corsair CMY8GX3M2B2133C9 4GB

Corsair CMY8GX3M2B2133C9 4GB

Corsair CMZ8GX3M1A1600C9 8GB

Corsair CMZ8GX3M1A1600C9 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-2133C15-16GVR 16GB

G Skill Intl F4-2133C15-16GVR 16GB

Kingston 9905471-071.A00LF 8GB

Kingston 9905471-071.A00LF 8GB

Corsair CMK16GX4M2A2666C18 8GB

Corsair CMK16GX4M2A2666C18 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M378A5143TB2-CTD 4GB

Samsung M378A5143TB2-CTD 4GB

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

A-DATA Technology AX4S2800316G18-B 16GB

A-DATA Technology AX4S2800316G18-B 16GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Micron Technology 4ATF1G64AZ-3G2E1 8GB

Micron Technology 4ATF1G64AZ-3G2E1 8GB