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Crucial Technology ST51264BA1339.16FK 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB
Confronto
Crucial Technology ST51264BA1339.16FK 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB
Punteggio complessivo
Crucial Technology ST51264BA1339.16FK 4GB
Punteggio complessivo
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB
Differenze
Specifiche tecniche
Commenti
Differenze
Motivi da considerare
Crucial Technology ST51264BA1339.16FK 4GB
Segnala un bug
Velocità di lettura più elevata, GB/s
13.6
12.8
Valore medio nei test
Motivi da considerare
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB
Segnala un bug
Al di sotto della latenza nei test PassMark, ns
26
27
Intorno -4% latenza inferiore
Specifiche tecniche
Elenco completo delle specifiche tecniche
Crucial Technology ST51264BA1339.16FK 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB
Caratteristiche principali
Tipo di memoria
DDR3
DDR3
Latenza in PassMark, ns
27
26
Velocità di lettura, GB/s
13.6
12.8
Velocità di scrittura, GB/s
8.3
8.3
Larghezza di banda della memoria, mbps
10600
10600
Other
Descrizione
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10
Temporizzazioni / Velocità di clock
7-7-7-20 / 1333 MHz
7-7-7-20 / 1333 MHz
Classifica PassMark (più sono, meglio è)
2237
2186
Crucial Technology ST51264BA1339.16FK 4GB Confronto tra le RAM
SK Hynix HMT351U6CFR8C-H9 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB Confronto tra le RAM
Samsung M378B5273DH0-CH9 4GB
SK Hynix HMT41GS6BFR8A-PB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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