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DDR5
DDR4
DDR3
DDR2
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G Skill Intl F5-5600J4040C16G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Comparez
G Skill Intl F5-5600J4040C16G 16GB vs Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Note globale
G Skill Intl F5-5600J4040C16G 16GB
Note globale
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Différences
Spécifications
Commentaires
Différences
Raisons de considérer
G Skill Intl F5-5600J4040C16G 16GB
Signaler un bogue
En dessous de la latence dans les tests PassMark, ns
22
24
Autour de 8% latence réduite
Vitesse d'écriture plus rapide, GB/s
13.5
12.5
Valeur moyenne dans les tests
Raisons de considérer
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Signaler un bogue
Vitesse de lecture plus rapide, GB/s
16
14.9
Valeur moyenne dans les tests
Spécifications
Liste complète des spécifications techniques
G Skill Intl F5-5600J4040C16G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Principales caractéristiques
Type de mémoire
DDR5
DDR4
Latence dans PassMark, ns
22
24
Vitesse de lecture, GB/s
14.9
16.0
Vitesse d'écriture, GB/s
13.5
12.5
Largeur de bande de la mémoire, mbps
19200
19200
Other
Description
PC5-19200, 1.1V, CAS Supported: 22 28 30 32 36 40 42
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Vitesse d'horloge
no data / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Classement PassMark (Plus il y en a, mieux c'est)
3679
2925
G Skill Intl F5-5600J4040C16G 16GB Comparaison des RAM
Kingston 99U5701-036.A00G 16GB
Kingston 9905701-132.A00G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB Comparaison des RAM
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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Signaler un bogue
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Bug description
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