G Skill Intl F5-5600J4040C16G 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

G Skill Intl F5-5600J4040C16G 16GB vs Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

差异规格评论

差异

G Skill Intl F5-5600J4040C16G 16GB

需要考虑的原因
G Skill Intl F5-5600J4040C16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 24

左右 8% 更低的延时
更快的写入速度，GB/s

13.5 12.5

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

更快的读取速度，GB/s

16 14.9

测试中的平均数值

规格

完整的技术规格清单

G Skill Intl F5-5600J4040C16G 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

主要特点

存储器类型

DDR5 DDR4
PassMark中的延时，ns

22 24
读取速度，GB/s

14.9 16.0
写入速度，GB/s

13.5 12.5
内存带宽，mbps

19200 19200

Other

描述

PC5-19200, 1.1V, CAS Supported: 22 28 30 32 36 40 42 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

no data / 2400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3679 2925

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMV4GX3M1B1600C11 4GB

Corsair CM4X8GF3000C15K4 8GB

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Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Crucial Technology CT8G4DFS832A.M8FR 8GB

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G Skill Intl F4-2666C15-4GVK 4GB

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