RAM
DDR5
DDR4
DDR3
DDR2
À propos du site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
À propos du site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
Comparez
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
Note globale
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Note globale
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
Différences
Spécifications
Commentaires
Différences
Raisons de considérer
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Signaler un bogue
Vitesse de lecture plus rapide, GB/s
3
14.6
Valeur moyenne dans les tests
Raisons de considérer
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
Signaler un bogue
En dessous de la latence dans les tests PassMark, ns
27
65
Autour de -141% latence réduite
Vitesse d'écriture plus rapide, GB/s
10.5
1,592.0
Valeur moyenne dans les tests
Bande passante mémoire plus élevée, mbps
17000
5300
Autour de 3.21 bande passante supérieure
Spécifications
Liste complète des spécifications techniques
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
Principales caractéristiques
Type de mémoire
DDR2
DDR4
Latence dans PassMark, ns
65
27
Vitesse de lecture, GB/s
3,580.8
14.6
Vitesse d'écriture, GB/s
1,592.0
10.5
Largeur de bande de la mémoire, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Vitesse d'horloge
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Classement PassMark (Plus il y en a, mieux c'est)
572
2409
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB Comparaison des RAM
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB Comparaison des RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Dernières comparaisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M471A4G43BB1-CWE 32GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingston KHX3333C16D4/8GX 8GB
Samsung M471B5273EB0-CK0 4GB
Asgard VMA42UH-MEC1U2AJ2 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Kingston 9905625-074.A00G 16GB
Crucial Technology CT51264BA1339.C16F 4GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 1
Crucial Technology CT51264BF160B.M16F 4GB
Avant Technology W641GU42J5213N3 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Corsair CMK16GX4M2K4266C16 8GB
Samsung 1600 CL10 Series 8GB
Corsair CM4X8GE2666C16K8 8GB
A-DATA Technology AD73I1C1674EV 4GB
Gloway International Co. Ltd. TYA4U2666D19321C 32GB
Kingston 9905403-090.A01LF 4GB
Crucial Technology CT8G4SFS832A.C8FP 8GB
Kingston ACR512X64D3S13C9G 4GB
Corsair CM4B8G2J2400A14K 8GB
Samsung M471B1G73DB0-YK0 8GB
SK Hynix HMA84GR7MFR4N-TF 32GB
Kingston 99P5471-002.A00LF 2GB
V-Color Technology Inc. TC416G24D817 16GB
Signaler un bogue
×
Bug description
Source link