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DDR3
DDR2
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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
A-DATA Technology AO1P24HC4R1-BUYS 4GB
Comparez
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs A-DATA Technology AO1P24HC4R1-BUYS 4GB
Note globale
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Note globale
A-DATA Technology AO1P24HC4R1-BUYS 4GB
Différences
Spécifications
Commentaires
Différences
Raisons de considérer
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Signaler un bogue
Vitesse de lecture plus rapide, GB/s
16
15.1
Valeur moyenne dans les tests
Vitesse d'écriture plus rapide, GB/s
12.5
11.8
Valeur moyenne dans les tests
Raisons de considérer
A-DATA Technology AO1P24HC4R1-BUYS 4GB
Signaler un bogue
Spécifications
Liste complète des spécifications techniques
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
A-DATA Technology AO1P24HC4R1-BUYS 4GB
Principales caractéristiques
Type de mémoire
DDR4
DDR4
Latence dans PassMark, ns
24
24
Vitesse de lecture, GB/s
16.0
15.1
Vitesse d'écriture, GB/s
12.5
11.8
Largeur de bande de la mémoire, mbps
19200
19200
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Vitesse d'horloge
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Classement PassMark (Plus il y en a, mieux c'est)
2925
2332
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB Comparaison des RAM
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
A-DATA Technology AO1P24HC4R1-BUYS 4GB Comparaison des RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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Signaler un bogue
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