RAM
DDR5
DDR4
DDR3
DDR2
À propos du site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
À propos du site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSA.8FARG 4GB
Comparez
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology BLS4G4D240FSA.8FARG 4GB
Note globale
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Note globale
Crucial Technology BLS4G4D240FSA.8FARG 4GB
Différences
Spécifications
Commentaires
Différences
Raisons de considérer
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Signaler un bogue
En dessous de la latence dans les tests PassMark, ns
24
30
Autour de 20% latence réduite
Vitesse d'écriture plus rapide, GB/s
12.5
12.4
Valeur moyenne dans les tests
Raisons de considérer
Crucial Technology BLS4G4D240FSA.8FARG 4GB
Signaler un bogue
Vitesse de lecture plus rapide, GB/s
16.3
16
Valeur moyenne dans les tests
Spécifications
Liste complète des spécifications techniques
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSA.8FARG 4GB
Principales caractéristiques
Type de mémoire
DDR4
DDR4
Latence dans PassMark, ns
24
30
Vitesse de lecture, GB/s
16.0
16.3
Vitesse d'écriture, GB/s
12.5
12.4
Largeur de bande de la mémoire, mbps
19200
19200
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Vitesse d'horloge
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Classement PassMark (Plus il y en a, mieux c'est)
2925
2489
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB Comparaison des RAM
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Crucial Technology BLS4G4D240FSA.8FARG 4GB Comparaison des RAM
Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Dernières comparaisons
Samsung 1600 CL10 Series 8GB
Kingston 9905743-034.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK16GX4M2B3200C16 8GB
Apacer Technology AQD-D4U8GN24-SE 8GB
Panram International Corporation PUD42400C154GNJW 4GB
Micron Technology 18HTF12872AY-800F1 1GB
DSL Memory D4SS12082SH21A-A 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMD32GX4M2A2666C15 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Corsair CMD16GX4M2A2400C14 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMW64GX4M8Z2933C16 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Avant Technology W6451U66J5213ND 4GB
Kingston 2GB-DDR2 800Mhz 2GB
Crucial Technology CT8G4DFS824A.M8FR 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK16GX4M2D2400C14 8GB
Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-2666C16-4GRB 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology GD2.1542WS.003 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Corsair CM4B8G1J2400A16K2-O 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMD16GX4M2B3200C16 8GB
Signaler un bogue
×
Bug description
Source link