RAM
DDR5
DDR4
DDR3
DDR2
À propos du site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
À propos du site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Comparez
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Note globale
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Note globale
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Différences
Spécifications
Commentaires
Différences
Raisons de considérer
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Signaler un bogue
En dessous de la latence dans les tests PassMark, ns
24
122
Autour de 80% latence réduite
Vitesse de lecture plus rapide, GB/s
16
9.4
Valeur moyenne dans les tests
Vitesse d'écriture plus rapide, GB/s
12.5
5.8
Valeur moyenne dans les tests
Raisons de considérer
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Signaler un bogue
Spécifications
Liste complète des spécifications techniques
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Principales caractéristiques
Type de mémoire
DDR4
DDR4
Latence dans PassMark, ns
24
122
Vitesse de lecture, GB/s
16.0
9.4
Vitesse d'écriture, GB/s
12.5
5.8
Largeur de bande de la mémoire, mbps
19200
19200
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Vitesse d'horloge
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Classement PassMark (Plus il y en a, mieux c'est)
2925
1411
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB Comparaison des RAM
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB Comparaison des RAM
A-DATA Technology AD73I1C1674EV 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Dernières comparaisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT16G4SFD8266.M16FRS 16GB
Samsung M378B5673FH0-CH9 2GB
Kingston 99U5704-001.A00G 4GB
Micron Technology 18HTF12872AY-800F1 1GB
Crucial Technology CT16G4DFD8213.C16FH1 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Mushkin 99[2/7/4]183 8GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Crucial Technology CT8G4DFD824A.C16FADP 8GB
Kingston 9905403-174.A00LF 2GB
Gold Key Technology Co Ltd NMSO480E85-2666E 8GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-4000C18-16GTZR 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Chun Well Technology Holding Limited CL18-20-20 D4-3600
Samsung M471B5173EB0-YK0 4GB
SK Hynix HMA451R7AFR8N-UH 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Crucial Technology CT8G4DFD824A.M16FF 8GB
Samsung M471B5273EB0-CK0 4GB
Corsair CM4X32GC3200C16K2E 32GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Solarflare Communications CT16G4DFD824A.C16FBR 16GB
Signaler un bogue
×
Bug description
Source link