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Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173EB0-YK0 4GB

Samsung M471B5173EB0-YK0 4GB vs Samsung M471B5173EB0-YK0 4GB

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Samsung M471B5173EB0-YK0 4GB

Samsung M471B5173EB0-YK0 4GB

Note globale
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Samsung M471B5173EB0-YK0 4GB

Samsung M471B5173EB0-YK0 4GB

Différences Spécifications Commentaires

Spécifications

Liste complète des spécifications techniques
Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173EB0-YK0 4GB
Principales caractéristiques
  • Type de mémoire
    DDR3 left arrow DDR3
  • Latence dans PassMark, ns
    44 left arrow 44
  • Vitesse de lecture, GB/s
    13.0 left arrow 13.0
  • Vitesse d'écriture, GB/s
    8.2 left arrow 8.2
  • Largeur de bande de la mémoire, mbps
    12800 left arrow 12800
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • Timings / Vitesse d'horloge
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Classement PassMark (Plus il y en a, mieux c'est)
    2069 left arrow 2069

Samsung M471B5173EB0-YK0 4GB Comparaison des RAM

SK Hynix HMT451S6DFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB

Samsung M471B5173EB0-YK0 4GB Comparaison des RAM

SK Hynix HMT451S6DFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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