SK Hynix DDR2 800 2G 2GB vs Samsung M378T5663QZ3-CF7 2GB

Note globale

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Note globale

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Différences Spécifications Commentaires

Différences

SK Hynix DDR2 800 2G 2GB

Raisons de considérer
SK Hynix DDR2 800 2G 2GB

Signaler un bogue

Vitesse d'écriture plus rapide, GB/s

1,884.0 1,813.5

Valeur moyenne dans les tests

Samsung M378T5663QZ3-CF7 2GB

Raisons de considérer
Samsung M378T5663QZ3-CF7 2GB

Signaler un bogue

En dessous de la latence dans les tests PassMark, ns

56 77

Autour de -38% latence réduite
Vitesse de lecture plus rapide, GB/s

4 2

Valeur moyenne dans les tests

Spécifications

Liste complète des spécifications techniques

SK Hynix DDR2 800 2G 2GB

Samsung M378T5663QZ3-CF7 2GB

Principales caractéristiques

Type de mémoire

DDR2 DDR2
Latence dans PassMark, ns

77 56
Vitesse de lecture, GB/s

2,936.9 4,387.7
Vitesse d'écriture, GB/s

1,884.0 1,813.5
Largeur de bande de la mémoire, mbps

6400 6400

Other

Description

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
Timings / Vitesse d'horloge

5-5-5-15 / 800 MHz 5-5-5-15 / 800 MHz
Classement PassMark (Plus il y en a, mieux c'est)

564 693

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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