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A-DATA Technology AM2L16BC4R1-B0AS 4GB
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Confronto
A-DATA Technology AM2L16BC4R1-B0AS 4GB vs Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Punteggio complessivo
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Punteggio complessivo
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Differenze
Specifiche tecniche
Commenti
Differenze
Motivi da considerare
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Segnala un bug
Al di sotto della latenza nei test PassMark, ns
27
31
Intorno 13% latenza inferiore
Motivi da considerare
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Segnala un bug
Velocità di lettura più elevata, GB/s
15.7
13.4
Valore medio nei test
Velocità di scrittura più elevata, GB/s
13.3
7.8
Valore medio nei test
Larghezza di banda di memoria superiore, mbps
21300
12800
Intorno 1.66 larghezza di banda superiore
Specifiche tecniche
Elenco completo delle specifiche tecniche
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Caratteristiche principali
Tipo di memoria
DDR3
DDR4
Latenza in PassMark, ns
27
31
Velocità di lettura, GB/s
13.4
15.7
Velocità di scrittura, GB/s
7.8
13.3
Larghezza di banda della memoria, mbps
12800
21300
Other
Descrizione
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Temporizzazioni / Velocità di clock
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Classifica PassMark (più sono, meglio è)
2181
3318
A-DATA Technology AM2L16BC4R1-B0AS 4GB Confronto tra le RAM
Kingston 99U5403-185.A00LF 8GB
Kingston 9905403-410.A00LF 4GB
Chun Well Technology Holding Limited MD4U1632161DCW 16GB Confronto tra le RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Ultimi confronti
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4DFD8213.C16FAD 16GB
Avant Technology F641GU67F9333G 8GB
Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Ramaxel Technology RMUA5110MB78HAF-2400 8GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4SFD8213.C16FAD 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 8ATF1G64AZ-2G1B1 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BL32G32C16U4B.M16FB1 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BL32G32C16U4R.M16FB1 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Ramaxel Technology RMSA3260MD78HAF-2666 8GB
Kingston KP4T2F-PSB 4GB
Kingston 9965604-033.D00G 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BL16G30C15U4W.M16FE1 16GB
A-DATA Technology AD73I1C1674EV 4GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266
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