Corsair CMX4GX3M2A1600C9 2GB vs Samsung 18ASF1G72PDZ-2G1B1 16GB

Punteggio complessivo

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

Punteggio complessivo

Samsung 18ASF1G72PDZ-2G1B1 16GB

Samsung 18ASF1G72PDZ-2G1B1 16GB

Differenze Specifiche tecniche Commenti

Differenze

Corsair CMX4GX3M2A1600C9 2GB

Motivi da considerare
Corsair CMX4GX3M2A1600C9 2GB

Velocità di lettura più elevata, GB/s

13.9 9.8

Valore medio nei test
Velocità di scrittura più elevata, GB/s

8.7 8.6

Valore medio nei test

Samsung 18ASF1G72PDZ-2G1B1 16GB

Motivi da considerare
Samsung 18ASF1G72PDZ-2G1B1 16GB

Al di sotto della latenza nei test PassMark, ns

32 38

Intorno -19% latenza inferiore
Larghezza di banda di memoria superiore, mbps

17000 10600

Intorno 1.6 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Corsair CMX4GX3M2A1600C9 2GB

Samsung 18ASF1G72PDZ-2G1B1 16GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR4
Latenza in PassMark, ns

38 32
Velocità di lettura, GB/s

13.9 9.8
Velocità di scrittura, GB/s

8.7 8.6
Larghezza di banda della memoria, mbps

10600 17000

Other

Descrizione

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Temporizzazioni / Velocità di clock

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Classifica PassMark (più sono, meglio è)

2106 2271

RAM Latency Calculator

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RAM 2

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