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Crucial Technology BLS8G3N18AES4.16FE 8GB
SK Hynix HMT41GS6MFR8A-PB 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB vs SK Hynix HMT41GS6MFR8A-PB 8GB

Punteggio complessivo
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Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Punteggio complessivo
star star star star star
SK Hynix HMT41GS6MFR8A-PB 8GB

SK Hynix HMT41GS6MFR8A-PB 8GB

Differenze Specifiche tecniche Commenti

Differenze

Crucial Technology BLS8G3N18AES4.16FE 8GB Motivi da considerare
Crucial Technology BLS8G3N18AES4.16FE 8GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    42 left arrow 45
    Intorno 7% latenza inferiore
SK Hynix HMT41GS6MFR8A-PB 8GB Motivi da considerare
SK Hynix HMT41GS6MFR8A-PB 8GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    13.7 left arrow 13.2
    Valore medio nei test
  • Velocità di scrittura più elevata, GB/s
    9.8 left arrow 9.4
    Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche
Crucial Technology BLS8G3N18AES4.16FE 8GB
SK Hynix HMT41GS6MFR8A-PB 8GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR3
  • Latenza in PassMark, ns
    42 left arrow 45
  • Velocità di lettura, GB/s
    13.2 left arrow 13.7
  • Velocità di scrittura, GB/s
    9.4 left arrow 9.8
  • Larghezza di banda della memoria, mbps
    12800 left arrow 12800
Other
  • Descrizione
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • Temporizzazioni / Velocità di clock
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Classifica PassMark (più sono, meglio è)
    2326 left arrow 2443

Crucial Technology BLS8G3N18AES4.16FE 8GB Confronto tra le RAM

Samsung M471B1G73DB0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

SK Hynix HMT41GS6MFR8A-PB 8GB Confronto tra le RAM

SK Hynix HMT351S6CFR8C-PB 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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