Crucial Technology CT51264BD160B.C16F 4GB vs Samsung M474A1G43DB0-CPB 8GB

Punteggio complessivo

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Punteggio complessivo

Samsung M474A1G43DB0-CPB 8GB

Samsung M474A1G43DB0-CPB 8GB

Differenze Specifiche tecniche Commenti

Differenze

Crucial Technology CT51264BD160B.C16F 4GB

Motivi da considerare
Crucial Technology CT51264BD160B.C16F 4GB

Velocità di lettura più elevata, GB/s

13.9 9.7

Valore medio nei test
Velocità di scrittura più elevata, GB/s

9.7 6.8

Valore medio nei test

Samsung M474A1G43DB0-CPB 8GB

Motivi da considerare
Samsung M474A1G43DB0-CPB 8GB

Al di sotto della latenza nei test PassMark, ns

27 41

Intorno -52% latenza inferiore
Larghezza di banda di memoria superiore, mbps

17000 12800

Intorno 1.33 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Crucial Technology CT51264BD160B.C16F 4GB

Samsung M474A1G43DB0-CPB 8GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR4
Latenza in PassMark, ns

41 27
Velocità di lettura, GB/s

13.9 9.7
Velocità di scrittura, GB/s

9.7 6.8
Larghezza di banda della memoria, mbps

12800 17000

Other

Descrizione

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Temporizzazioni / Velocità di clock

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Classifica PassMark (più sono, meglio è)

2366 1767

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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