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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB
Confronto
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB
Punteggio complessivo
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Punteggio complessivo
SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB
Differenze
Specifiche tecniche
Commenti
Differenze
Motivi da considerare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Segnala un bug
Velocità di scrittura più elevata, GB/s
12.5
12.1
Valore medio nei test
Motivi da considerare
SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB
Segnala un bug
Velocità di lettura più elevata, GB/s
16.7
16
Valore medio nei test
Specifiche tecniche
Elenco completo delle specifiche tecniche
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB
Caratteristiche principali
Tipo di memoria
DDR4
DDR4
Latenza in PassMark, ns
24
24
Velocità di lettura, GB/s
16.0
16.7
Velocità di scrittura, GB/s
12.5
12.1
Larghezza di banda della memoria, mbps
19200
19200
Other
Descrizione
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Temporizzazioni / Velocità di clock
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Classifica PassMark (più sono, meglio è)
2925
2904
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB Confronto tra le RAM
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB Confronto tra le RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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