RAM
DDR5
DDR4
DDR3
DDR2
Informazioni sul sito
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Informazioni sul sito
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Confronto
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB vs Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Punteggio complessivo
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Punteggio complessivo
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Differenze
Specifiche tecniche
Commenti
Differenze
Motivi da considerare
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Segnala un bug
Al di sotto della latenza nei test PassMark, ns
22
32
Intorno 31% latenza inferiore
Motivi da considerare
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Segnala un bug
Velocità di lettura più elevata, GB/s
19.4
15.1
Valore medio nei test
Velocità di scrittura più elevata, GB/s
16.3
10.0
Valore medio nei test
Larghezza di banda di memoria superiore, mbps
21300
10600
Intorno 2.01 larghezza di banda superiore
Specifiche tecniche
Elenco completo delle specifiche tecniche
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Caratteristiche principali
Tipo di memoria
DDR3
DDR4
Latenza in PassMark, ns
22
32
Velocità di lettura, GB/s
15.1
19.4
Velocità di scrittura, GB/s
10.0
16.3
Larghezza di banda della memoria, mbps
10600
21300
Other
Descrizione
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Temporizzazioni / Velocità di clock
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Classifica PassMark (più sono, meglio è)
2423
3726
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB Confronto tra le RAM
Corsair CMZ16GX3M4X1866C9 4GB
Panram International Corporation PUD31600C118G2VS 8GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB Confronto tra le RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Ultimi confronti
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
Corsair CMK16GX4M2A2666C16 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Gold Key Technology Co Ltd NMUD480E86-3200 8GB
Patriot Memory (PDP Systems) PSD34G133381 4GB
Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338C
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266
Crucial Technology CT102464BA160B.M16 8GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB
Samsung M471B5173DB0-YK0 4GB
Kingston KHX2400C12D4/4GX 4GB
Crucial Technology BLS16G4D240FSB.16FAD 16GB
Crucial Technology CT16G4DFRA266.M16FR 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-4133C17-8GTZR 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMR32GX4M4C3600C18 8GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C
Chun Well Technology Holding Limited D4U1636181DC 16GB
takeMS International AG TMS2GB264D082-805G 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB
Segnala un bug
×
Bug description
Source link