RAM
DDR5
DDR4
DDR3
DDR2
Informazioni sul sito
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Informazioni sul sito
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kreton Corporation 51624xxxx68x35xxxx 2GB
Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB
Confronto
Kreton Corporation 51624xxxx68x35xxxx 2GB vs Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB
Punteggio complessivo
Kreton Corporation 51624xxxx68x35xxxx 2GB
Punteggio complessivo
Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB
Differenze
Specifiche tecniche
Commenti
Differenze
Motivi da considerare
Kreton Corporation 51624xxxx68x35xxxx 2GB
Segnala un bug
Velocità di lettura più elevata, GB/s
4
10.5
Valore medio nei test
Motivi da considerare
Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB
Segnala un bug
Al di sotto della latenza nei test PassMark, ns
35
59
Intorno -69% latenza inferiore
Velocità di scrittura più elevata, GB/s
8.1
1,855.7
Valore medio nei test
Larghezza di banda di memoria superiore, mbps
17000
5300
Intorno 3.21 larghezza di banda superiore
Specifiche tecniche
Elenco completo delle specifiche tecniche
Kreton Corporation 51624xxxx68x35xxxx 2GB
Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB
Caratteristiche principali
Tipo di memoria
DDR2
DDR4
Latenza in PassMark, ns
59
35
Velocità di lettura, GB/s
4,168.0
10.5
Velocità di scrittura, GB/s
1,855.7
8.1
Larghezza di banda della memoria, mbps
5300
17000
Other
Descrizione
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 14 15 16
Temporizzazioni / Velocità di clock
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Classifica PassMark (più sono, meglio è)
680
1998
Kreton Corporation 51624xxxx68x35xxxx 2GB Confronto tra le RAM
Samsung M395T5663QZ4-CE66 1GB
Qimonda 72T256521EFD3SC2 2GB
Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB Confronto tra le RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1K70QB0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Ultimi confronti
Kreton Corporation 51624xxxx68x35xxxx 2GB
Chun Well Technology Holding Limited CL19-20-20 D4-3600
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Panram International Corporation PUD43000C164G2NJK 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Panram International Corporation W4N2666PS-16G 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 2400 C16 Series 16GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4SFD824A.C16FBD1 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4SFD824A.M16FH 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS8G4D240FSC.16FBR2 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4DFD824A.C16FBD2 8GB
Kingston KF560C40-16 16GB
Corsair CMK64GX5M2B5200C40 32GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 3866 C18 Series 8GB
Segnala un bug
×
Bug description
Source link