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Micron Technology 8KTF51264HZ-1G6N1 4GB
Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-PB 2GB

Micron Technology 8KTF51264HZ-1G6N1 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-PB 2GB

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Micron Technology 8KTF51264HZ-1G6N1 4GB

Micron Technology 8KTF51264HZ-1G6N1 4GB

Punteggio complessivo
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Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-PB 2GB

Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-PB 2GB

Differenze Specifiche tecniche Commenti

Differenze

Micron Technology 8KTF51264HZ-1G6N1 4GB Motivi da considerare
Micron Technology 8KTF51264HZ-1G6N1 4GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    13.5 left arrow 11.4
    Valore medio nei test
  • Velocità di scrittura più elevata, GB/s
    8.3 left arrow 7.9
    Valore medio nei test
Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-PB 2GB Motivi da considerare
Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-PB 2GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    30 left arrow 42
    Intorno -40% latenza inferiore

Specifiche tecniche

Elenco completo delle specifiche tecniche
Micron Technology 8KTF51264HZ-1G6N1 4GB
Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-PB 2GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR3
  • Latenza in PassMark, ns
    42 left arrow 30
  • Velocità di lettura, GB/s
    13.5 left arrow 11.4
  • Velocità di scrittura, GB/s
    8.3 left arrow 7.9
  • Larghezza di banda della memoria, mbps
    12800 left arrow 12800
Other
  • Descrizione
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
  • Temporizzazioni / Velocità di clock
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Classifica PassMark (più sono, meglio è)
    2114 left arrow 1762

Micron Technology 8KTF51264HZ-1G6N1 4GB Confronto tra le RAM

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Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-PB 2GB Confronto tra le RAM

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RAM Latency Calculator
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