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Nanya Technology M2F8G64CB8HC9N-DI 8GB
Samsung M471A1A43DB0-CPB 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Samsung M471A1A43DB0-CPB 8GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Punteggio complessivo
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Samsung M471A1A43DB0-CPB 8GB

Samsung M471A1A43DB0-CPB 8GB

Differenze Specifiche tecniche Commenti

Differenze

Nanya Technology M2F8G64CB8HC9N-DI 8GB Motivi da considerare
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    13.9 left arrow 12.3
    Valore medio nei test
  • Velocità di scrittura più elevata, GB/s
    8.6 left arrow 6.4
    Valore medio nei test
Samsung M471A1A43DB0-CPB 8GB Motivi da considerare
Samsung M471A1A43DB0-CPB 8GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    27 left arrow 37
    Intorno -37% latenza inferiore
  • Larghezza di banda di memoria superiore, mbps
    17000 left arrow 12800
    Intorno 1.33 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Samsung M471A1A43DB0-CPB 8GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR4
  • Latenza in PassMark, ns
    37 left arrow 27
  • Velocità di lettura, GB/s
    13.9 left arrow 12.3
  • Velocità di scrittura, GB/s
    8.6 left arrow 6.4
  • Larghezza di banda della memoria, mbps
    12800 left arrow 17000
Other
  • Descrizione
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Temporizzazioni / Velocità di clock
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Classifica PassMark (più sono, meglio è)
    2395 left arrow 1732

Nanya Technology M2F8G64CB8HC9N-DI 8GB Confronto tra le RAM

SK Hynix HMT41GR7AFR4C-PB 8GB
Kingston 99P5474-050.A00LF 4GB

Samsung M471A1A43DB0-CPB 8GB Confronto tra le RAM

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Ultimi confronti

Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Samsung M471A1A43DB0-CPB 8GB
Samsung M471A1A43DB0-CPB 8GB
Memoria RAM
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Memoria RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
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Panram International Corporation PUD42400C154G4NJK 4GB
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Avant Technology F641GU67F9333G 8GB
Avant Technology F641GU67F9333G 8GB
Panram International Corporation PUD42133C154G2VS 4GB
Panram International Corporation PUD42133C154G2VS 4GB
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Avant Technology F641GU67F9333G 8GB
Avant Technology F641GU67F9333G 8GB
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Kingston KHX3000C15/16GX 16GB
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A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Micron Technology 16ATF2G64AZ-2G1B1 16GB
Micron Technology 16ATF2G64AZ-2G1B1 16GB
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Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
SK Hynix HMA851U6DJR6N-XN 4GB
SK Hynix HMA851U6DJR6N-XN 4GB
Memoria RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
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Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
Memoria RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
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Kingston 8ATF1G64AZ-2G1B1 8GB
Memoria RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Wilk Elektronik S.A. IRX3000D464L16/16G 16GB
Wilk Elektronik S.A. IRX3000D464L16/16G 16GB
Memoria RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
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G Skill Intl F4-2933C14-16GFX 16GB
Memoria RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
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Kingston ACR26D4S9D8ME-16 16GB
Memoria RAM
Corsair CMX4GX3M1A1333C9 4GB
Corsair CMX4GX3M1A1333C9 4GB
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16G
Memoria RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology CT16G4SFRA32A.C16FJ 16GB
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Memoria RAM