Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Samsung T471A1K43CB1-CRC 8GB

Punteggio complessivo

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Punteggio complessivo

Samsung T471A1K43CB1-CRC 8GB

Samsung T471A1K43CB1-CRC 8GB

Differenze Specifiche tecniche Commenti

Differenze

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Motivi da considerare
Nanya Technology M2F8G64CB8HC9N-DI 8GB

Velocità di lettura più elevata, GB/s

13.9 13.8

Valore medio nei test
Velocità di scrittura più elevata, GB/s

8.6 6.5

Valore medio nei test

Samsung T471A1K43CB1-CRC 8GB

Motivi da considerare
Samsung T471A1K43CB1-CRC 8GB

Al di sotto della latenza nei test PassMark, ns

24 37

Intorno -54% latenza inferiore
Larghezza di banda di memoria superiore, mbps

19200 12800

Intorno 1.5 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Samsung T471A1K43CB1-CRC 8GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR4
Latenza in PassMark, ns

37 24
Velocità di lettura, GB/s

13.9 13.8
Velocità di scrittura, GB/s

8.6 6.5
Larghezza di banda della memoria, mbps

12800 19200

Other

Descrizione

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Temporizzazioni / Velocità di clock

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Classifica PassMark (più sono, meglio è)

2395 1983

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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