Nanya Technology M2X4G64CB8HG9N-DG 4GB vs Samsung M471A1K1KBB1-CRC 8GB

Punteggio complessivo

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Punteggio complessivo

Samsung M471A1K1KBB1-CRC 8GB

Samsung M471A1K1KBB1-CRC 8GB

Differenze Specifiche tecniche Commenti

Differenze

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Motivi da considerare
Nanya Technology M2X4G64CB8HG9N-DG 4GB

Velocità di lettura più elevata, GB/s

14.9 12.6

Valore medio nei test
Velocità di scrittura più elevata, GB/s

9.5 6.2

Valore medio nei test

Samsung M471A1K1KBB1-CRC 8GB

Motivi da considerare
Samsung M471A1K1KBB1-CRC 8GB

Al di sotto della latenza nei test PassMark, ns

26 36

Intorno -38% latenza inferiore
Larghezza di banda di memoria superiore, mbps

19200 12800

Intorno 1.5 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Samsung M471A1K1KBB1-CRC 8GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR4
Latenza in PassMark, ns

36 26
Velocità di lettura, GB/s

14.9 12.6
Velocità di scrittura, GB/s

9.5 6.2
Larghezza di banda della memoria, mbps

12800 19200

Other

Descrizione

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Temporizzazioni / Velocità di clock

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Classifica PassMark (più sono, meglio è)

2292 1970

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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