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PNY Electronics 64C0MHHHJ-HS 4GB
Mushkin 99[2/7/4]198F 8GB

PNY Electronics 64C0MHHHJ-HS 4GB vs Mushkin 99[2/7/4]198F 8GB

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PNY Electronics 64C0MHHHJ-HS 4GB

PNY Electronics 64C0MHHHJ-HS 4GB

Punteggio complessivo
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Mushkin 99[2/7/4]198F 8GB

Mushkin 99[2/7/4]198F 8GB

Differenze Specifiche tecniche Commenti

Differenze

PNY Electronics 64C0MHHHJ-HS 4GB Motivi da considerare
PNY Electronics 64C0MHHHJ-HS 4GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    13.7 left arrow 12.6
    Valore medio nei test
Mushkin 99[2/7/4]198F 8GB Motivi da considerare
Mushkin 99[2/7/4]198F 8GB
Segnala un bug
  • Velocità di scrittura più elevata, GB/s
    8.7 left arrow 8.3
    Valore medio nei test
  • Larghezza di banda di memoria superiore, mbps
    17000 left arrow 10600
    Intorno 1.6 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche
PNY Electronics 64C0MHHHJ-HS 4GB
Mushkin 99[2/7/4]198F 8GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR4
  • Latenza in PassMark, ns
    26 left arrow 26
  • Velocità di lettura, GB/s
    13.7 left arrow 12.6
  • Velocità di scrittura, GB/s
    8.3 left arrow 8.7
  • Larghezza di banda della memoria, mbps
    10600 left arrow 17000
Other
  • Descrizione
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 20
  • Temporizzazioni / Velocità di clock
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Classifica PassMark (più sono, meglio è)
    2270 left arrow 2257

PNY Electronics 64C0MHHHJ-HS 4GB Confronto tra le RAM

A-DATA Technology EL63I1C1624ZV 4GB
G Skill Intl F4-3200C16-8GTRS 8GB

Mushkin 99[2/7/4]198F 8GB Confronto tra le RAM

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
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