PNY Electronics PNY 2GB vs Panram International Corporation D4N2400PS-8G 8GB

Punteggio complessivo

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Punteggio complessivo

Panram International Corporation D4N2400PS-8G 8GB

Panram International Corporation D4N2400PS-8G 8GB

Differenze Specifiche tecniche Commenti

Differenze

PNY Electronics PNY 2GB

Motivi da considerare
PNY Electronics PNY 2GB

Velocità di lettura più elevata, GB/s

13.8 12.5

Valore medio nei test
Velocità di scrittura più elevata, GB/s

8.4 6.1

Valore medio nei test

Panram International Corporation D4N2400PS-8G 8GB

Motivi da considerare
Panram International Corporation D4N2400PS-8G 8GB

Al di sotto della latenza nei test PassMark, ns

25 27

Intorno -8% latenza inferiore
Larghezza di banda di memoria superiore, mbps

19200 10600

Intorno 1.81 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

PNY Electronics PNY 2GB

Panram International Corporation D4N2400PS-8G 8GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR4
Latenza in PassMark, ns

27 25
Velocità di lettura, GB/s

13.8 12.5
Velocità di scrittura, GB/s

8.4 6.1
Larghezza di banda della memoria, mbps

10600 19200

Other

Descrizione

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Temporizzazioni / Velocità di clock

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Classifica PassMark (più sono, meglio è)

2274 1858

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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