PUSKILL DDR3 1600 8G 8GB vs Samsung M378A5143EB1-CPB 4GB

Punteggio complessivo

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Punteggio complessivo

Samsung M378A5143EB1-CPB 4GB

Samsung M378A5143EB1-CPB 4GB

Differenze Specifiche tecniche Commenti

Differenze

PUSKILL DDR3 1600 8G 8GB

Motivi da considerare
PUSKILL DDR3 1600 8G 8GB

Velocità di lettura più elevata, GB/s

16.7 14.6

Valore medio nei test

Samsung M378A5143EB1-CPB 4GB

Motivi da considerare
Samsung M378A5143EB1-CPB 4GB

Velocità di scrittura più elevata, GB/s

10.8 10.0

Valore medio nei test
Larghezza di banda di memoria superiore, mbps

17000 12800

Intorno 1.33 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

PUSKILL DDR3 1600 8G 8GB

Samsung M378A5143EB1-CPB 4GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR4
Latenza in PassMark, ns

38 38
Velocità di lettura, GB/s

16.7 14.6
Velocità di scrittura, GB/s

10.0 10.8
Larghezza di banda della memoria, mbps

12800 17000

Other

Descrizione

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Temporizzazioni / Velocità di clock

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Classifica PassMark (più sono, meglio è)

2753 2298

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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