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Samsung 1600 CL10 Series 8GB
AMD R748G2133U2S 8GB

Samsung 1600 CL10 Series 8GB vs AMD R748G2133U2S 8GB

Punteggio complessivo
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Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

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AMD R748G2133U2S 8GB

AMD R748G2133U2S 8GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung 1600 CL10 Series 8GB Motivi da considerare
Samsung 1600 CL10 Series 8GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    16.1 left arrow 15.9
    Valore medio nei test
AMD R748G2133U2S 8GB Motivi da considerare
AMD R748G2133U2S 8GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    23 left arrow 25
    Intorno -9% latenza inferiore
  • Velocità di scrittura più elevata, GB/s
    11.4 left arrow 10.1
    Valore medio nei test
  • Larghezza di banda di memoria superiore, mbps
    17000 left arrow 12800
    Intorno 1.33 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche
Samsung 1600 CL10 Series 8GB
AMD R748G2133U2S 8GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR4
  • Latenza in PassMark, ns
    25 left arrow 23
  • Velocità di lettura, GB/s
    16.1 left arrow 15.9
  • Velocità di scrittura, GB/s
    10.1 left arrow 11.4
  • Larghezza di banda della memoria, mbps
    12800 left arrow 17000
Other
  • Descrizione
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Temporizzazioni / Velocità di clock
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Classifica PassMark (più sono, meglio è)
    2764 left arrow 2852

Samsung 1600 CL10 Series 8GB Confronto tra le RAM

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

AMD R748G2133U2S 8GB Confronto tra le RAM

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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