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Samsung M378B5673EH1-CF8 2GB
Micron Technology AFLD416EH1P 16GB

Samsung M378B5673EH1-CF8 2GB vs Micron Technology AFLD416EH1P 16GB

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Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Punteggio complessivo
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Micron Technology AFLD416EH1P 16GB

Micron Technology AFLD416EH1P 16GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M378B5673EH1-CF8 2GB Motivi da considerare
Samsung M378B5673EH1-CF8 2GB
Segnala un bug
  • Velocità di scrittura più elevata, GB/s
    7.5 left arrow 6.9
    Valore medio nei test
Micron Technology AFLD416EH1P 16GB Motivi da considerare
Micron Technology AFLD416EH1P 16GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    13.7 left arrow 12.7
    Valore medio nei test
  • Larghezza di banda di memoria superiore, mbps
    19200 left arrow 8500
    Intorno 2.26 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche
Samsung M378B5673EH1-CF8 2GB
Micron Technology AFLD416EH1P 16GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR4
  • Latenza in PassMark, ns
    28 left arrow 28
  • Velocità di lettura, GB/s
    12.7 left arrow 13.7
  • Velocità di scrittura, GB/s
    7.5 left arrow 6.9
  • Larghezza di banda della memoria, mbps
    8500 left arrow 19200
Other
  • Descrizione
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • Temporizzazioni / Velocità di clock
    7-7-7-20 / 1066 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Classifica PassMark (più sono, meglio è)
    1988 left arrow 2312

Samsung M378B5673EH1-CF8 2GB Confronto tra le RAM

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB

Micron Technology AFLD416EH1P 16GB Confronto tra le RAM

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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