Samsung M378B5673EH1-CF8 2GB vs Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB

Punteggio complessivo

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Punteggio complessivo

Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB

Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M378B5673EH1-CF8 2GB

Motivi da considerare
Samsung M378B5673EH1-CF8 2GB

Velocità di lettura più elevata, GB/s

12.7 11.1

Valore medio nei test
Velocità di scrittura più elevata, GB/s

7.5 6.0

Valore medio nei test

Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB

Motivi da considerare
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB

Al di sotto della latenza nei test PassMark, ns

27 28

Intorno -4% latenza inferiore
Larghezza di banda di memoria superiore, mbps

17000 8500

Intorno 2 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Samsung M378B5673EH1-CF8 2GB

Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR4
Latenza in PassMark, ns

28 27
Velocità di lettura, GB/s

12.7 11.1
Velocità di scrittura, GB/s

7.5 6.0
Larghezza di banda della memoria, mbps

8500 17000

Other

Descrizione

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Temporizzazioni / Velocità di clock

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Classifica PassMark (più sono, meglio è)

1988 1890

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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