Samsung M378B5673FH0-CH9 2GB vs Micron Technology CT8G4DFD8213.16FA11 8GB

Punteggio complessivo

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Punteggio complessivo

Micron Technology CT8G4DFD8213.16FA11 8GB

Micron Technology CT8G4DFD8213.16FA11 8GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M378B5673FH0-CH9 2GB

Motivi da considerare
Samsung M378B5673FH0-CH9 2GB

Velocità di lettura più elevata, GB/s

14.4 12

Valore medio nei test
Velocità di scrittura più elevata, GB/s

9.5 9.1

Valore medio nei test

Micron Technology CT8G4DFD8213.16FA11 8GB

Motivi da considerare
Micron Technology CT8G4DFD8213.16FA11 8GB

Al di sotto della latenza nei test PassMark, ns

28 35

Intorno -25% latenza inferiore
Larghezza di banda di memoria superiore, mbps

17000 10600

Intorno 1.6 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Samsung M378B5673FH0-CH9 2GB

Micron Technology CT8G4DFD8213.16FA11 8GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR4
Latenza in PassMark, ns

35 28
Velocità di lettura, GB/s

14.4 12.0
Velocità di scrittura, GB/s

9.5 9.1
Larghezza di banda della memoria, mbps

10600 17000

Other

Descrizione

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Temporizzazioni / Velocità di clock

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Classifica PassMark (più sono, meglio è)

2321 2347

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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