Samsung M378B5773DH0-CH9 2GB vs Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Punteggio complessivo

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Punteggio complessivo

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M378B5773DH0-CH9 2GB

Motivi da considerare
Samsung M378B5773DH0-CH9 2GB

Al di sotto della latenza nei test PassMark, ns

39 44

Intorno 11% latenza inferiore
Velocità di lettura più elevata, GB/s

11.7 10.9

Valore medio nei test

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Motivi da considerare
Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Velocità di scrittura più elevata, GB/s

7.5 7.2

Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche

Samsung M378B5773DH0-CH9 2GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR3
Latenza in PassMark, ns

39 44
Velocità di lettura, GB/s

11.7 10.9
Velocità di scrittura, GB/s

7.2 7.5
Larghezza di banda della memoria, mbps

10600 10600

Other

Descrizione

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
Temporizzazioni / Velocità di clock

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
Classifica PassMark (più sono, meglio è)

1749 1853

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

Ultimi confronti

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

G Skill Intl F4-3600C16-8GTRGC 8GB

G Skill Intl F4-3600C16-8GTRGC 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Apacer Technology 78.BAGSR.4030B 4GB

Apacer Technology 78.BAGSR.4030B 4GB

Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

Corsair CMT16GX4M2C3000C15 8GB

Corsair CMT16GX4M2C3000C15 8GB

Corsair CMV4GX3M1B1600C11 4GB

Corsair CMV4GX3M1B1600C11 4GB

Crucial Technology BLS4G4S240FSD.M8FADM 4GB

Crucial Technology BLS4G4S240FSD.M8FADM 4GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Crucial Technology CT4G4SFS8213.C8FBD2 4GB

Crucial Technology CT4G4SFS8213.C8FBD2 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Kingston 9905624-014.A00G 4GB

Kingston 9905624-014.A00G 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Corsair CMK16GX4M4B3400C16 4GB

Corsair CMK16GX4M4B3400C16 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Maxsun MSD416G26Q3 16GB

Maxsun MSD416G26Q3 16GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Corsair CM4X8GF2400C16S4 8GB

Corsair CM4X8GF2400C16S4 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Micron Technology 8ATF2G64HZ-2G3A1 16GB

Micron Technology 8ATF2G64HZ-2G3A1 16GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Apacer Technology 78.B1GN3.AZ32B 4GB

Apacer Technology 78.B1GN3.AZ32B 4GB

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

Corsair CMK8GX4M1A2666C16 8GB

Corsair CMK8GX4M1A2666C16 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Kingston 9965604-033.D00G 16GB

Kingston 9965604-033.D00G 16GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Kingston 9905678-026.A00G 8GB

Kingston 9905678-026.A00G 8GB