Samsung M378B5773DH0-CH9 2GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Samsung M378B5773DH0-CH9 2GB vs Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Overall score
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Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Overall score
star star star star star
Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Differences

  • Below the latency in the PassMark tests, ns
    39 left arrow 44
    Around 11% lower latency
  • Faster reading speed, GB/s
    11.7 left arrow 10.9
    Average value in the tests
  • Faster write speed, GB/s
    7.5 left arrow 7.2
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M378B5773DH0-CH9 2GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    39 left arrow 44
  • Read speed, GB/s
    11.7 left arrow 10.9
  • Write speed, GB/s
    7.2 left arrow 7.5
  • Memory bandwidth, mbps
    10600 left arrow 10600
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • Ranking PassMark (The more the better)
    1749 left arrow 1853
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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