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Samsung M378T5663QZ3-CF7 2GB
Kllisre M471A1K43CB1-CTD 8GB

Samsung M378T5663QZ3-CF7 2GB vs Kllisre M471A1K43CB1-CTD 8GB

Punteggio complessivo
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Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Punteggio complessivo
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Kllisre M471A1K43CB1-CTD 8GB

Kllisre M471A1K43CB1-CTD 8GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M378T5663QZ3-CF7 2GB Motivi da considerare
Samsung M378T5663QZ3-CF7 2GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    4 left arrow 11.4
    Valore medio nei test
Kllisre M471A1K43CB1-CTD 8GB Motivi da considerare
Kllisre M471A1K43CB1-CTD 8GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    45 left arrow 56
    Intorno -24% latenza inferiore
  • Velocità di scrittura più elevata, GB/s
    8.2 left arrow 1,813.5
    Valore medio nei test
  • Larghezza di banda di memoria superiore, mbps
    21300 left arrow 6400
    Intorno 3.33 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche
Samsung M378T5663QZ3-CF7 2GB
Kllisre M471A1K43CB1-CTD 8GB
Caratteristiche principali
  • Tipo di memoria
    DDR2 left arrow DDR4
  • Latenza in PassMark, ns
    56 left arrow 45
  • Velocità di lettura, GB/s
    4,387.7 left arrow 11.4
  • Velocità di scrittura, GB/s
    1,813.5 left arrow 8.2
  • Larghezza di banda della memoria, mbps
    6400 left arrow 21300
Other
  • Descrizione
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • Temporizzazioni / Velocità di clock
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Classifica PassMark (più sono, meglio è)
    693 left arrow 2281

Samsung M378T5663QZ3-CF7 2GB Confronto tra le RAM

Kingston 2GB-DDR2 800Mhz 2GB
TwinMOS 8D7T5MK8-TATP 2GB

Kllisre M471A1K43CB1-CTD 8GB Confronto tra le RAM

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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