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Samsung M393A2G40EB2-CTD 16GB
Samsung M393A2K40BB2-CTD 16GB

Samsung M393A2G40EB2-CTD 16GB vs Samsung M393A2K40BB2-CTD 16GB

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Samsung M393A2G40EB2-CTD 16GB

Samsung M393A2G40EB2-CTD 16GB

Punteggio complessivo
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Samsung M393A2K40BB2-CTD 16GB

Samsung M393A2K40BB2-CTD 16GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M393A2G40EB2-CTD 16GB Motivi da considerare
Samsung M393A2G40EB2-CTD 16GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    44 left arrow 65
    Intorno 32% latenza inferiore
Samsung M393A2K40BB2-CTD 16GB Motivi da considerare
Samsung M393A2K40BB2-CTD 16GB
Segnala un bug
  • Velocità di scrittura più elevata, GB/s
    5.8 left arrow 5.6
    Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche
Samsung M393A2G40EB2-CTD 16GB
Samsung M393A2K40BB2-CTD 16GB
Caratteristiche principali
  • Tipo di memoria
    DDR4 left arrow DDR4
  • Latenza in PassMark, ns
    44 left arrow 65
  • Velocità di lettura, GB/s
    8.5 left arrow 8.5
  • Velocità di scrittura, GB/s
    5.6 left arrow 5.8
  • Larghezza di banda della memoria, mbps
    21300 left arrow 21300
Other
  • Descrizione
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Temporizzazioni / Velocità di clock
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Classifica PassMark (più sono, meglio è)
    1660 left arrow 1981

Samsung M393A2G40EB2-CTD 16GB Confronto tra le RAM

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Samsung M393A2K40BB2-CTD 16GB Confronto tra le RAM

A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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