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Samsung M393B2G70BH0-CK0 16GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

Samsung M393B2G70BH0-CK0 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

Punteggio complessivo
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Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Punteggio complessivo
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M393B2G70BH0-CK0 16GB Motivi da considerare
Samsung M393B2G70BH0-CK0 16GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    9.2 left arrow 7.8
    Valore medio nei test
  • Velocità di scrittura più elevata, GB/s
    8.1 left arrow 6.1
    Valore medio nei test
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB Motivi da considerare
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    41 left arrow 54
    Intorno -32% latenza inferiore
  • Larghezza di banda di memoria superiore, mbps
    17000 left arrow 12800
    Intorno 1.33 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche
Samsung M393B2G70BH0-CK0 16GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR4
  • Latenza in PassMark, ns
    54 left arrow 41
  • Velocità di lettura, GB/s
    9.2 left arrow 7.8
  • Velocità di scrittura, GB/s
    8.1 left arrow 6.1
  • Larghezza di banda della memoria, mbps
    12800 left arrow 17000
Other
  • Descrizione
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • Temporizzazioni / Velocità di clock
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Classifica PassMark (più sono, meglio è)
    2105 left arrow 1512

Samsung M393B2G70BH0-CK0 16GB Confronto tra le RAM

Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB Confronto tra le RAM

Samsung M3 78T5663RZ3-CE6 2GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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