RAM
DDR5
DDR4
DDR3
DDR2
Informazioni sul sito
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Informazioni sul sito
it
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M393B5170FH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Samsung M393B5170FH0-CH9 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Punteggio complessivo
star star star star star
Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

Punteggio complessivo
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M393B5170FH0-CH9 4GB Motivi da considerare
Samsung M393B5170FH0-CH9 4GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    10 left arrow 9.8
    Valore medio nei test
  • Velocità di scrittura più elevata, GB/s
    8.2 left arrow 7.9
    Valore medio nei test
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB Motivi da considerare
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    35 left arrow 49
    Intorno -40% latenza inferiore
  • Larghezza di banda di memoria superiore, mbps
    17000 left arrow 10600
    Intorno 1.6 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche
Samsung M393B5170FH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR4
  • Latenza in PassMark, ns
    49 left arrow 35
  • Velocità di lettura, GB/s
    10.0 left arrow 9.8
  • Velocità di scrittura, GB/s
    8.2 left arrow 7.9
  • Larghezza di banda della memoria, mbps
    10600 left arrow 17000
Other
  • Descrizione
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • Temporizzazioni / Velocità di clock
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Classifica PassMark (più sono, meglio è)
    2116 left arrow 2126

Samsung M393B5170FH0-CH9 4GB Confronto tra le RAM

Samsung M471B5273DH0-CH9 4GB
Samsung M392B1K70CM0-YH9 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB Confronto tra le RAM

TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMK16GX4M2K4266C16 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Ultimi confronti

Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
Memoria RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT16G4SFD8266.C16FN 16GB
Crucial Technology CT16G4SFD8266.C16FN 16GB
Memoria RAM
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C
Kingston KF2666C16D4/8G 8GB
Kingston KF2666C16D4/8G 8GB
Memoria RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
Memoria RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Mushkin MR[A/B]4U320GJJM8G 8GB
Mushkin MR[A/B]4U320GJJM8G 8GB
Memoria RAM
Team Group Inc. Team-Elite-1333 4GB
Team Group Inc. Team-Elite-1333 4GB
G Skill Intl F4-4400C17-8GVK 8GB
G Skill Intl F4-4400C17-8GVK 8GB
Memoria RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Corsair CMK8GX4M2C3000C16 4GB
Corsair CMK8GX4M2C3000C16 4GB
Memoria RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-3200C14-8GFX 8GB
G Skill Intl F4-3200C14-8GFX 8GB
Memoria RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Crucial Technology CT16G4SFD8266.M16FJ 16GB
Crucial Technology CT16G4SFD8266.M16FJ 16GB
Memoria RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
Golden Empire CL14-14-14 D4-2400 16GB
Golden Empire CL14-14-14 D4-2400 16GB
Memoria RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3600C17-16GTZSW 16GB
G Skill Intl F4-3600C17-16GTZSW 16GB
Memoria RAM
Super Talent STT-WB160CL0901 2GB
Super Talent STT-WB160CL0901 2GB
Panram International Corporation W4U2133PS-8G 8GB
Panram International Corporation W4U2133PS-8G 8GB
Memoria RAM
Crucial Technology CT51264BF160B.M16F 4GB
Crucial Technology CT51264BF160B.M16F 4GB
G Skill Intl F4-4266C17-16GTZRB 16GB
G Skill Intl F4-4266C17-16GTZRB 16GB
Memoria RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Crucial Technology CT8G4SFS824A.C8FBD1 8GB
Crucial Technology CT8G4SFS824A.C8FBD1 8GB
Memoria RAM