Samsung M393B5170FH0-CH9 4GB vs InnoDisk Corporation 16GB

Punteggio complessivo

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

Punteggio complessivo

InnoDisk Corporation 16GB

InnoDisk Corporation 16GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M393B5170FH0-CH9 4GB

Motivi da considerare
Samsung M393B5170FH0-CH9 4GB

Velocità di lettura più elevata, GB/s

10 7.7

Valore medio nei test

InnoDisk Corporation 16GB

Motivi da considerare
InnoDisk Corporation 16GB

Al di sotto della latenza nei test PassMark, ns

38 49

Intorno -29% latenza inferiore
Larghezza di banda di memoria superiore, mbps

17000 10600

Intorno 1.6 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Samsung M393B5170FH0-CH9 4GB

InnoDisk Corporation 16GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR4
Latenza in PassMark, ns

49 38
Velocità di lettura, GB/s

10.0 7.7
Velocità di scrittura, GB/s

8.2 8.2
Larghezza di banda della memoria, mbps

10600 17000

Other

Descrizione

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Temporizzazioni / Velocità di clock

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Classifica PassMark (più sono, meglio è)

2116 2163

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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