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Samsung M4 70T5663CZ3-CE6 2GB
G Skill Intl F4-2400C15Z8GNT 8GB

Samsung M4 70T5663CZ3-CE6 2GB vs G Skill Intl F4-2400C15Z8GNT 8GB

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Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Punteggio complessivo
star star star star star
G Skill Intl F4-2400C15Z8GNT 8GB

G Skill Intl F4-2400C15Z8GNT 8GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M4 70T5663CZ3-CE6 2GB Motivi da considerare
Samsung M4 70T5663CZ3-CE6 2GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    3 left arrow 13.6
    Valore medio nei test
G Skill Intl F4-2400C15Z8GNT 8GB Motivi da considerare
G Skill Intl F4-2400C15Z8GNT 8GB
Segnala un bug
  • Velocità di scrittura più elevata, GB/s
    6.5 left arrow 1,441.2
    Valore medio nei test
  • Larghezza di banda di memoria superiore, mbps
    17000 left arrow 5300
    Intorno 3.21 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche
Samsung M4 70T5663CZ3-CE6 2GB
G Skill Intl F4-2400C15Z8GNT 8GB
Caratteristiche principali
  • Tipo di memoria
    DDR2 left arrow DDR4
  • Latenza in PassMark, ns
    69 left arrow 69
  • Velocità di lettura, GB/s
    3,325.1 left arrow 13.6
  • Velocità di scrittura, GB/s
    1,441.2 left arrow 6.5
  • Larghezza di banda della memoria, mbps
    5300 left arrow 17000
Other
  • Descrizione
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Temporizzazioni / Velocità di clock
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Classifica PassMark (più sono, meglio è)
    525 left arrow 1598

Samsung M4 70T5663CZ3-CE6 2GB Confronto tra le RAM

Samsung M4 70T5663QZ3-CE6 2GB
Nanya Technology NT2GT64U8HD0BN-3C 2GB

G Skill Intl F4-2400C15Z8GNT 8GB Confronto tra le RAM

STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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