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Samsung M4 70T5663QZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB vs Samsung M4 70T5663CZ3-CE6 2GB

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Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

Punteggio complessivo
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Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M4 70T5663QZ3-CE6 2GB Motivi da considerare
Samsung M4 70T5663QZ3-CE6 2GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    68 left arrow 69
    Intorno 1% latenza inferiore
  • Velocità di lettura più elevata, GB/s
    3 left arrow 3
    Valore medio nei test
  • Velocità di scrittura più elevata, GB/s
    1,702.6 left arrow 1,441.2
    Valore medio nei test
Samsung M4 70T5663CZ3-CE6 2GB Motivi da considerare
Samsung M4 70T5663CZ3-CE6 2GB
Segnala un bug

Specifiche tecniche

Elenco completo delle specifiche tecniche
Samsung M4 70T5663QZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
Caratteristiche principali
  • Tipo di memoria
    DDR2 left arrow DDR2
  • Latenza in PassMark, ns
    68 left arrow 69
  • Velocità di lettura, GB/s
    3,886.6 left arrow 3,325.1
  • Velocità di scrittura, GB/s
    1,702.6 left arrow 1,441.2
  • Larghezza di banda della memoria, mbps
    5300 left arrow 5300
Other
  • Descrizione
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
  • Temporizzazioni / Velocità di clock
    5-5-5-15 / 667 MHz left arrow 5-5-5-15 / 667 MHz
  • Classifica PassMark (più sono, meglio è)
    654 left arrow 525

Samsung M4 70T5663QZ3-CE6 2GB Confronto tra le RAM

SK Hynix HYMP125U64CP8-S6 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Samsung M4 70T5663CZ3-CE6 2GB Confronto tra le RAM

Nanya Technology NT2GT64U8HD0BN-3C 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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