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Samsung M471A1K43EB1-CWE 8GB
Micron Technology 16ATF2G64HZ-3G2J1 16GB

Samsung M471A1K43EB1-CWE 8GB vs Micron Technology 16ATF2G64HZ-3G2J1 16GB

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Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

Punteggio complessivo
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Micron Technology 16ATF2G64HZ-3G2J1 16GB

Micron Technology 16ATF2G64HZ-3G2J1 16GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M471A1K43EB1-CWE 8GB Motivi da considerare
Samsung M471A1K43EB1-CWE 8GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    16 left arrow 15.4
    Valore medio nei test
Micron Technology 16ATF2G64HZ-3G2J1 16GB Motivi da considerare
Micron Technology 16ATF2G64HZ-3G2J1 16GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    34 left arrow 46
    Intorno -35% latenza inferiore

Specifiche tecniche

Elenco completo delle specifiche tecniche
Samsung M471A1K43EB1-CWE 8GB
Micron Technology 16ATF2G64HZ-3G2J1 16GB
Caratteristiche principali
  • Tipo di memoria
    DDR4 left arrow DDR4
  • Latenza in PassMark, ns
    46 left arrow 34
  • Velocità di lettura, GB/s
    16.0 left arrow 15.4
  • Velocità di scrittura, GB/s
    12.4 left arrow 12.4
  • Larghezza di banda della memoria, mbps
    25600 left arrow 25600
Other
  • Descrizione
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • Temporizzazioni / Velocità di clock
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Classifica PassMark (più sono, meglio è)
    2660 left arrow 2974

Samsung M471A1K43EB1-CWE 8GB Confronto tra le RAM

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology 16ATF2G64HZ-3G2J1 16GB Confronto tra le RAM

Kingston 99U5403-036.A00G 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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