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Samsung M471A1K43EB1-CWE 8GB
Micron Technology 16ATF2G64HZ-3G2J1 16GB

Samsung M471A1K43EB1-CWE 8GB vs Micron Technology 16ATF2G64HZ-3G2J1 16GB

Pontuação geral
star star star star star
Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

Pontuação geral
star star star star star
Micron Technology 16ATF2G64HZ-3G2J1 16GB

Micron Technology 16ATF2G64HZ-3G2J1 16GB

Diferenças Especificações Comentários

Diferenças

Samsung M471A1K43EB1-CWE 8GB Razões a considerar
Samsung M471A1K43EB1-CWE 8GB
Relatar um erro
  • Velocidade de leitura mais rápida, GB/s
    16 left arrow 15.4
    Valor médio nos testes
Micron Technology 16ATF2G64HZ-3G2J1 16GB Razões a considerar
Micron Technology 16ATF2G64HZ-3G2J1 16GB
Relatar um erro
  • Abaixo da latência nos testes do PassMark, ns
    34 left arrow 46
    Por volta de -35% menor latência

Especificações

Lista completa de especificações técnicas
Samsung M471A1K43EB1-CWE 8GB
Micron Technology 16ATF2G64HZ-3G2J1 16GB
Características principais
  • Tipo de memória
    DDR4 left arrow DDR4
  • Latência em PassMark, ns
    46 left arrow 34
  • Velocidade de leitura, GB/s
    16.0 left arrow 15.4
  • Velocidade de escrita, GB/s
    12.4 left arrow 12.4
  • Largura de banda de memória, mbps
    25600 left arrow 25600
Other
  • Descrição
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • Tempos / Velocidade do relógio
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (Quanto mais, melhor)
    2660 left arrow 2974

Samsung M471A1K43EB1-CWE 8GB Comparações de RAM

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology 16ATF2G64HZ-3G2J1 16GB Comparações de RAM

Kingston 99U5403-036.A00G 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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